- Chinese researchers have developed a super fast non -volatile flash memory
- The graphene canal allows a picosecond writing speed and persistent storage
- The “Pox” device targets AI bottles with low -speed performance and high -speed performance
A research team in China has developed what affirmations are the fastest non-volatile semiconductor memory device reported to date, with a bit of writing a bit every 400 picoseconds.
The unfortunately called “POX” (phase change oxide) is a flash device with channel charter two -dimensional graphene developed at Fudan University in Shanghai.
The team built the aircraft using a Dirac graphene channel combined with a loading battery. It works faster than access times to the system generally associated with types of volatile memory such as Sram and Dram, which are generally between 1 and 10 nanoseconds. A picosecond is a thousandth of a nanosecond.
Pave the way for its future applications
Volatile memory like Sram and Dram offers high speed but loses data when electricity is deleted. The non -volatile flash keeps data without electricity but tends to operate on higher latencies, often in dozens of microseconds at the NAND level. This makes it less suitable for low latency workloads such as IA inference. The PoX device aims to fill this gap by combining persistent speed and storage.
The graphene-based device uses a two-dimensional liner injection mechanism. Its thin body structure improves horizontal electric fields, improving the acceleration of carriers and injection efficiency. At 5 V, it has reached 400PS writing speeds and maintained the performance of more than 5.5 million cycles. Long -term retention tests have shown data stability over a 10 -year simulated period.
“Using AI algorithms to optimize process test conditions, we have considerably advanced this innovation and opened the way for its future applications,” said Zhou Peng, principal researcher of the study.
“Our technological breakthrough should not only reshape the landscape of global storage technology, conduct industrial upgrades and promote new application scenarios, but also solid support for China to lead in relevant fields.”
Liu Chunsen, also involved in research, said that the team had created a fully functional chip and now aims to integrate it into existing devices.
“The next step is to integrate it into existing smartphones and computers,” he said.
“In this way, during the deployment of local models, we will no longer meet bottlenecks such as the train and heating caused by existing storage technology.”
Via Nature
