- The Transistor of the University of Beijing could surpass Intel, TSMC and the best Samsung silicon chips
- Complete door coverage increases speed and reduces energy consumption in the revolutionary design of the Chinese transistor
- China may have just skipped American flea technology with this silicon-free transistor innovation
Chinese researchers from the University of Beijing have announced what seems to be a breakthrough in the design of transistors which, if marketed, could considerably move the microprocessor development department.
The team created a silicon -free transistor based on a two -dimensional material, the bismuth oxyselenide.
Innovation depends on the Gate-All-Around architecture (Gaafet), where the transistor door rolls up completely around the source. The traditional finfeet conceptions, which dominate current silicon -based processors, only allow partial doors coverage. This complete structure improves the contact area between the door and the channel, improving performance by reducing energy leaks and allowing better current control.
Could this mark the end of silicon fleas?
Published in Nature materialsThe document suggests that the new 2D GAAFET could compete or even exceed silicon and energy efficiency transistors.
Researchers claim that their 2D transistor reaches speeds 40% faster than the latest 3 nm chips of Intel while using 10% less power, performance that would place it in front of the current TSMC and Samsung processors.
Partial coverage of doors in traditional conceptions limits current control and increases energy loss. The new Gate structure addresses these problems, resulting in high-voltage gain and ultra-basic use. The team has already built small logical units using the new design.
“It is the fastest and most effective transistor of all time,” said the University of Beijing. These complaints are supported by tests carried out under conditions identical to those used for commercial flea managers.
“If flea innovations based on existing materials are considered a” shortcut “, then our development of transistors in terms of 2D materials is akin to` `track changes ”, said Professor Peng Hailin, the main project scientist.
Unlike the vertical structures of the finish, the new design resembles intertwined bridges. This architectural change can overcome the miniaturization limits confronted with silicon technology, especially since the industry grows below the 3 Nm threshold. It could also benefit from the fastest laptops that require such compact chips.
The team has developed two new Bismuth-based materials: bi₂o₂se as a semiconductor and bi₂seo₅ as the dielectric door.
These materials have low interface energy, reducing defects and the diffusion of electrons.
“This allows electrons to flow without almost no resistance, like water through a smooth pipe,” said Peng.
The performance results are supported by the calculations of the functional theory of density (DFT) and validated by physical tests using a high-precision manufacturing platform at PKU.
Researchers claim that transistors can be manufactured using the current semiconductor infrastructure, simplifying future integration.
